Параметры транзистора 2SA114. Интернет-справочник основных параметров транзисторов.

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Каверин Вениамин Александрович

Основные параметры транзистора 2SA114 биполярного низкочастотного pnp.

Исходный полупроводниковый материал, на основе которого изготовлен транзистор: германий (Ge)
Структура полупроводникового перехода: pnp

Pc max	Ucb max	Uce max	Ueb max	Ic max	Tj max, °C	Ft max	Cc tip	Hfe
50mW	34V	—	6V	10mA	85°C	10MHz	12	40T

Производитель: FUJITSU
Сфера применения: RF, Low Power, General Purpose
Популярность: 4966
Условные обозначения описаны на странице «Теория».

Схемы транзистора 2SA114

Общий вид транзистора 2SA114.	Цоколевка транзистора 2SA114.

Коллективный разум. Дополнения для транзистора 2SA114.

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Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте».
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Транзистор а114 параметры цоколевка

Наименование производителя: 2SA114

Максимальная рассеиваемая мощность (Pc): 0.05 W

Макcимально допустимое напряжение коллектор-база (Ucb): 34 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.01 A

Предельная температура PN-перехода (Tj): 85 °C

Граничная частота коэффициента передачи тока (ft): 10 MHz

Ёмкость коллекторного перехода (Cc): 12 pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO44-2

2SA114 Datasheet (PDF)

0.1. 2sa1145.pdf Size:138K _toshiba

0.4. 2sa1141.pdf Size:158K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

0.5. 2sa1147.pdf Size:145K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

0.6. 2sa1142.pdf Size:147K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol3 BaseAbsolute maximum ratin

0.7. 2sa1146.pdf Size:147K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBO

2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO

0.9. 2sa1141.pdf Size:222K _inchange_semiconductor

0.10. 2sa1147.pdf Size:208K _inchange_semiconductor

0.11. 2sa1145.pdf Size:207K _inchange_semiconductor

0.12. 2sa1142.pdf Size:173K _inchange_semiconductor

0.13. 2sa1146.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =- 140V(Min)(BR)CEOComplement to Type 2SC2706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM R

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Транзистор а114 параметры цоколевка

Технические данные (datasheet)

ТранзисторU_КЭ0 /
U_{КБ0 ПРОБ}
ВI_{К, МАКС}
мАP_{К, МАКС}
мВтh_21Эf_гр
МГцИзготовительмин.макс.I_К
мАU_КЭ
ВНазвание (полное)Название (сокращённое)AF11415/201060501,51275American Microsemiconductor IncAmerMicroSCNAS Etektronische Halbleiter GmbhNAS ElektSwampscott Electronics Со IncSwampscottSpace Power Electronics IncSpace Power

Цоколёвка

ТипНомера выводов12344 выводаEBCaseC

U_{КЭ0, ПРОБ} — напряжение пробоя коллектор-эмиттер биполярного транзистора при токе базы равном нулю.

U_{КБ0, ПРОБ} — напряжение пробоя коллектор-база биполярного транзистора.

U_КЭ — напряжение источника питания биполярного транзистора при измерении коэффициента усиления h_21Э.

I_{К, МАКС} — максимально допустимый постоянный коллекторный ток биполярного транзистора.

I_К — постоянный коллекторный ток биполярного транзистора при измерении коэффициента усиления h_21Э.

f_ГР — максимальная частота коэффициента передачи тока в схеме с общим эмиттером.

P_{К, МАКС} — постоянная максимально допустимая мощность рассеиваемая коллектором биполярного транзистора.

* — Транзистор не является полным аналогом, но возможна замена.

При замене оригинального транзистора аналогом необходимо сравнить технические данные транзисторов и типы корпусов. Решение о замене транзистора аналогом должно приниматься с учётом конкретной схемы в которой он работает.

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Транзистор а114 параметры цоколевка

Наименование производителя: DTA114ESA

Встроенный резистор цепи смещения R1 = 10 kOhm

Встроенный резистор цепи смещения R2 = 10 kOhm

Соотношение сопротивлений R1/R2 = 1

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 140 MHz

Статический коэффициент передачи тока (hfe): 30

DTA114ESA Datasheet (PDF)

DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP)FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolationto allow positive biasing of the input.They also have the advantage ofalmost co

0.3. dta114esa.pdf Size:1199K _kexin

DIP Type TransistorsDigital TransistorsDTA114ESA (KDTA114ESA)TO-92SUnit:mm4.00.12.480.245 TYP Features Built-in bias resistors enable the configuration of an inverter circuit0.48 (max)0.35 (min ) without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete21 30.55 (max) isol

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Транзистор а114 параметры цоколевка

Наименование производителя: 2SC114

Максимальная рассеиваемая мощность (Pc): 0.75 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 80 MHz

Статический коэффициент передачи тока (hfe): 25

2SC114 Datasheet (PDF)

0.1. 2sc1140.pdf Size:177K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1140DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

0.2. 2sc1141.pdf Size:177K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1141DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.1. 2sc1173.pdf Size:93K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.2. 2sc1169.pdf Size:63K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.3. 2sc1162.pdf Size:29K _hitachi

2SC1162Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SA715OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5VCollector current IC 2.5 ACollector peak current

9.7. 2sc1162.pdf Size:392K _secos

9.8. 2sc1172.pdf Size:69K _wingshing

NPN TRIPLE DIFFUSED2SC1172 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

9.9. 2sc1170.pdf Size:146K _jmnic

9.10. 2sc1172.pdf Size:143K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAME

9.11. 2sc1195.pdf Size:142K _jmnic

JMnic Product SpecificationSilicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Ab

9.12. 2sc1173.pdf Size:154K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current :IC=3A Collector dissipation:PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (T

9.13. 2sc1162.pdf Size:172K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base

9.14. 2sc1116.pdf Size:142K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

9.15. 2sc1106.pdf Size:142K _jmnic

9.16. 2sc1187.pdf Size:73K _usha

9.17. 2sc1162.pdf Size:180K _lge

2SC1162(NPN) TO-126 Transistor TO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features2.5007.400 Low frequency power amplifier 2.9001.1007.8001.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300VCBO Collector-Emitter Voltage 35 VVCEO Collector-Emitter Voltage 35 V2.100

9.18. 2sc1170.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1170DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.19. 2sc1170a.pdf Size:129K _inchange_semiconductor

9.20. 2sc1172.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1172DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.21. 2sc1115.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1115DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.22. 2sc1195.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1195DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.23. 2sc1112.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1112DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.24. 2sc1185.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1185DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.25. 2sc1114.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1114DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.26. 2sc1108.pdf Size:186K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1108DESCRIPTIONLow Collector Saturation VoltageHigh Current 4A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.27. 2sc1161.pdf Size:181K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1161DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for low frequency high voltage power amplifierTV vertical deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

9.28. 2sc1157.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION With TO-202 package High transition frequency Complement to type 2SA647 APPLICATIONS For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25

9.29. 2sc1111.pdf Size:177K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1111DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.30. 2sc1113.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1113DESCRIPTIONHigh Current CapacityWide area of safe operationMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in audio frequency power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

9.31. 2sc1173.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1173DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA473100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

9.32. 2sc1162.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC1162DESCRIPTIONHigh Collector Current I = 2.5ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SA715Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a

9.33. 2sc1163.pdf Size:182K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1163DESCRIPTIONHigh Collector Current I = 0.1ACCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for low frequency power amplifier appl

9.34. 2sc1116.pdf Size:177K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1116DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.35. 2sc1102.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1102DESCRIPTIONWith TO-66 packageHigh VoltageHigh transistor frequencyMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in color TV video output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

9.36. 2sc1106.pdf Size:176K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1106DESCRIPTIONWith TO-3 PackageHigh power dissipationHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor voltage regulators,switching mode power supplyapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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